Samsung Electronics has announced that it will begin mass producing the industry’s first 4 GB DRAM package based on the second-generation High Bandwidth Memory (HBM2) interface.
The 4GB DRAM package is based on the second-generation HBM (HBM2) interface, which can transmit data at a speed more than seven times the current DRAM performance limit.
The new RAM is meant for use in high performance computing (HPC), advanced graphics and network systems, as well as enterprise servers.
“By mass producing next-generation HBM2 DRAM, we can contribute much more to the rapid adoption of next-generation HPC systems by global IT companies,” said Sewon Chun, senior vice president, Memory Marketing, Samsung Electronics in a statement.
Samsung says that the newly introduced 4GB HBM2 DRAM based on the company’s 20-nanometer process and features 256GBps of bandwidth, which is double that of a HBM1 DRAM package. Samsung also says that its new RAM is more power efficient than previous versions.
Samsung also plans to start producing an 8GB HBM2 DRAM package within this year as well.
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